A Novel RF CMOS Ultra-Wide-Band LNA at 2.66 – 3.75 GHz in 180nm Technology
M. Ramana Reddy1, N.S. Murthy Sarma2, P. Chandrasekhar3

1M. Ramana Reddy, Department of ECE, Osmania University, CBIT, Hyderabad (Telangana), India.
2Dr. N.S .Murthy Sarma, Professor, Department of ECE, Osmania University, CBIT, Hyderabad (Telangana), India.
3Dr. P. Chandrasekhar, Professor, & Head, Department of ECE, Osmania University, CBIT, Hyderabad (Telangana), India.

Manuscript received on 18 June 2019 | Revised Manuscript received on 25 June 2019 | Manuscript published on 30 June 2019 | PP: 957-960 | Volume-8 Issue-5, June 2019 | Retrieval Number: E7050068519/19©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Abstract: The designed UWB LNA is exhibits a less Noise and large Gain with better input and output matching. The designed Low Noise Amplifier simulation by using Cadence tools in 180nm CMOS Radio Frequency using TSMC technology. The designed LNA is of Common Gate (CG) with Cascode stages are used in different communication applications. Like WiMAX, WI-Fi and WLAN. This (USB LNA) Low Noise Amplifier achieved a gain of Above 20 dB and Noise Figure (NF) achieved a 3.782 dB at frequency of 3.0642 GHz to 3.211 GHz. The simulation result attains with bandwidth is1.0921 GHz with the center frequency (fc ) at 3.132 GHz and it consumed 13.234 mW of power from a 1.8 V power supply and 1 dB compression point of -16.223dBm is attained.

Scope of the Article: Frequency Selective Surface