ESD Induced Reliability Problems in Space Grade Devices
C. Ramachandra1, Sarat Kumar Dash2
1Dr. C. Ramachandra, Professor, Centre for Post Graduate Studies, Jain University, Bangalore (Karnataka), India.
2Dr. Sarat Kumar Dash, Scientist, ISRO Satellite Centre, HAL Airport Road, Bangalore (Karnataka), India.
Manuscript received on 13 August 2016 | Revised Manuscript received on 20 August 2016 | Manuscript Published on 30 August 2016 | PP: 138-140 | Volume-5 Issue-6, August 2016 | Retrieval Number: F4702085616/16©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: ESD induced reliability problems in an IC have been studied in detail. PEM (Photon Emission Microscopy) analysis has indicated characteristic emission spots at same location from all the failed devices. Reprocessing of the failed device reveals Gate oxide rupture as root cause of the failure. Protection circuits have been designed to prevent ESD induced damage to the devices. The devices are found to be safe till 4500 V stress after protection circuit is implemented.
Keywords: ESD (Electro Static Discharge), HBM (Human Body Model), PEM (Photon Emission Microscope), BPSG (Boron Phosphorous Silicate Glass)
Scope of the Article: Reliability Scalability