Improving the Response of a DC/DC Converter by Providing a New Structure for Embedded Schottky Diode
Hamed Sepahvand1, Soghra Raisi2
1Hamed Sepahvand, Department of Electrical and Electronic, Islamic Azad University, Abadan, Iran.
2Soghra Raisi, Department of Electrical and Electronic, Islamic Azad University, Shoushtar, Iran.
Manuscript received on July 27, 2013. | Revised Manuscript received on August 03, 2013. | Manuscript published on August 30, 2013. | PP: 190-194 | Volume-2, Issue-6, August 2013. | Retrieval Number: F2024082613/2013©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: Paper In this paper, a new schottky diode with high speed switching is presented. Reverse recovery current and reverse recovery time are two parameters to determine the switching speed of power diodes. If a method could control the depletion of majority carriers in cut off time, it can enhance the switching speed. In this work, some islands, with non-similar type to bulk, are implemented in the bulk of the diode. These islands can gather and recombine the abandon majority carriers. So, the reverse recovery current can be limit by this way. To test this structure a simple fast schottky diode is applied in a DC/DC converter. The simulations are done in Silvaco software.
Keywords: Schottky diode, Reverse recovery, DC,DC converter, Recombination.