Magnetic Tunnel Junctions Design in Magnetoresistive Random Access Memory [MRAM] for FPGA Architecture
Hamsa S1, Thangadurai. N2, Ananth A.G3
1Hamsa. S, Research Scholar, Department of Electronics and Communication Engineering, JAIN Deemed-to-be University, Bangalore (Karnataka), India.
2Dr. Thangadurai. N, Professor and Head., Department of Electronics and Communication Engineering, JAIN Deemed-to-be University, Bangalore (Karnataka), India.
3Dr. Ananth. A.G, Department of Electronics and Communication Engineering, NMAMIT, Nitte, Udupi (Karnataka), India.
Manuscript received on 18 June 2019 | Revised Manuscript received on 25 June 2019 | Manuscript published on 30 June 2019 | PP: 979-982 | Volume-8 Issue-5, June 2019 | Retrieval Number: E7062068519/19©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: An MTJ-MRAM circuit has been designed to function as Non-Volatile memory circuit using CMOS 45nm and 90nm Technology. The other existing memory circuits like SRAM and Flash are designed in 45nm and 90nm CMOS Technology and their output behavioral characteristic, power and delay parameters are obtained in order to compare with the performance of MTJ-MRAM. MRAM behavioral characteristics are compared with existing volatile and non-volatile memory circuits. The design has been carried out using Cadence Virtuoso – Electronic Design Automation (EDA) Software Tool. In Analog Design Environment (ADE), the advanced design and simulation is performed in virtuoso platform. The schematic for MTJ-MRAM is designed and simulations are carried out in 45nm and 90nm Technology using a test environment. The purpose of the research is to design memory circuit that gives non-volatility which can be implemented for FPGA architecture. Present FPGA architectures which are non-volatile based, have limitations and demands for a better non-volatile memory to be integrated within. The research demonstrates, MTJ-MRAM with better performance than existing flash based and anti-fuse based types of FPGAs. The paper compares power dissipation and delay of MTJ based MRAM with existing volatile SRAM and non-volatile Flash memories that are currently used in FPGA architecture. MTJ-MRAM shows non-volatile behavioral characteristics and also shows significant power and delay reduction when compared to non-volatile flash memory and SRAM volatile memory circuit.
Keywords: Magnetic Tunnel Junction [MTJ], MRAM, SRAM, Non-volatility, Flash Memory, EDA, ADE
Scope of the Article: Computer Science and Its Applications