Circuit Edit Technology for Submicron Structures in Semiconductor Devices
A. M. Khan
Dr. A. M. Khan, Associate Professor & Chairman, Department of Electronics, Mangalore University, Konaje  Karnataka, India.
Manuscript received on May 19, 2013. | Revised Manuscript received on June 01, 2013. | Manuscript published on June 30, 2013. | PP: 255-257 | Volume-2, Issue-5, June 2013. | Retrieval Number: E1781062513/2013©BEIESP

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Abstract: Aluminum and copper metal structures with sub micron dimension are widely used in semiconductor devices. Precise cutting of these metal lines is one of the fundamental requirements in VLSI Circuit Edit technology. Cutting of these sub micron metal lines should ensure good electrical isolation while maintaining nil / minimal damage to closely spaced adjacent metal structures. In this experimental work, both focused ion beam (FIB) technology and focused Laser beam technology have been explored. Relative merits and demerits of these technologies have been discussed. Laser beam assisted technology is found to be viable for cutting metal lines if spacing between metal lines is greater than two microns. Focused ion beam assisted technology is found to be quite effective in cutting metal structures when spacing between metal lines is less than a micron.
Keywords: VLSI, FIB, Circuit Edit, Laser, IC.