Thermal Effects and Stability of Cylindrical Surrounding Double-Gate (CSDG) MOSFET
Okikioluwa E. Oyedeji1, Viranjay M. Srivastava2
1Okikioluwa E. Oyedeji, Department of Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban South Africa.
2Viranjay M. Srivastava, Department of Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban South Africa.
Manuscript received on 28 March 2019 | Revised Manuscript received on 07 April 2019 | Manuscript Published on 11 April 2019 | PP: 145-151 | Volume-8 Issue-4C, April 2019 | Retrieval Number: D24350484C19/19©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Abstract: This research work analyzes the thermal resistance in the CSDG MOSFET to realize the effect of thermal heat on the drain current, transconductance, and other parameters along a range of temperature of 0 – 300 K. This analysis has been verified through numerical simulation to determine the variation between the parameters and temperature. Thereafter, the thermal noise in CSDG MOSFET has been scrutinized with comparison to other MOSFETs. Finally, the temperature sensitivity of this device will be used to explore how the thermal stability can be ensured in the proposed CSDG MOSFET to affect its reliability and improved performance.
Keywords: CSDG MOSFET, Nanotechnology, Thermal Resistance, Thermal Stability, Transconductance, VLSI.
Scope of the Article: Thermal Engineering