Electrical Characteristics of GaAs Nano- HEMT
Moumita Bhoumik, Electronics & Communication Engineering Dept, Mallabhum Institute of Technology, Bishnupur, (West-Bengal), India.
Manuscript received on November 27, 2013. | Revised Manuscript received on December 13, 2013. | Manuscript published on December 30, 2013. | PP: 367-372 | Volume-3, Issue-2, December 2013. | Retrieval Number: B2490123213/2013©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: In today’s world, there is a demand for high frequency devices & circuits. And Nano technology can enhance the speed of devices & circuits due to reduction of its carrier transit time. Previously research work has been done regarding electrical characteristics of high frequency devices made up of semiconductor materials such as – MESFETs & HEMTs which included current-voltage characteristics and also Noise Power Spectral Density Analysis using various substrate materials like SiC, GaAs etc.  with gate length Lg in µm range. Now emphasis is given on electrical characteristics analysis on GaAs Nano-HEMT by reducing the gate length Lg in nm range.
Keywords: Gallium Arsenide, Nano-HEMT, Noise PSD, 1,f Noise.