Review of CMOS Amplifiers for High Frequency Applications
Sajin. C.S1, T. A. Shahul Hameed2
1Sajin.C.S*, Department of ECE,LBS Centre for Science and Technology, Research Centre, University of Kerala, India.
2Dr. T.A. Shahul Hameed, Department of ECE, TKM College of Engineering, Kollam, Kerala, India.
Manuscript received on December 02, 2020. | Revised Manuscript received on December 05, 2020. | Manuscript published on December 30, 2020. | PP: 175-180 | Volume-10 Issue-2, December 2020. | Retrieval Number: 100.1/ijeat.B21011210220 | DOI: 10.35940/ijeat.B2101.1210220
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: The headway in electronics technology proffers user-friendly devices. The characteristics such as high integration, low power consumption, good noise immunity are the significant benefits that CMOS offer, paying many challenges simultaneously with it. The short channel effects and presence of parasitic which prevent speed pose questions on the performance parameters. A great sort of works has done by many groups in the design of the CMOS amplifier for high-frequency applications to discuss the parameters such as power consumption, high bandwidth, high speed and linearity trade-off to obtain an optimized output. A lot of amplifier topologies are experimented and discussed in the literature with its design and simulation. In this paper, the various efforts associated with CMOS amplifier circuit for high-frequency applications are studying extensively.
Keywords: CMOS (Complementary Metal Oxide Semiconductor), Operational Transconductance Amplifier (OTA), Phase Margin, UGB (Unity Gain Bandwidth).
Scope of the Article: Operational Research