Performance Analysis of Devices in Double Gate MOSFET
Tanushree Debilata Das1, Ramdulari Pradhan2, Debabrata Singh3, Adyasha Rath4, Sonali Pattnaik5
1Tanushree Debilata Das, Department of Electronics & Communication, ITER, S’O’A University, BBSR, Odisha, India.
2Ramdulari Pradhan, Department of Electronics & Communication, ITER, S’O’A University, BBSR, Odisha, India.
3Debabrata Singh, Department of Computer Science & Information Technology, ITER, S’O’A University, BBSR, Odisha, India.
4Adyasha Rath, Department of Computer Science & Information Technology, ITER, S’O’A University, BBSR, Odisha, India.
5Sonali Pattnaik, Department of Electronics & Communication, ITER, S’O’A University, BBSR, Odisha, India.
Manuscript received on 10 October 2017 | Revised Manuscript received on 18 October 2017 | Manuscript Published on 30 October 2017 | PP: 131-136 | Volume-7 Issue-1, October 2017 | Retrieval Number: A5210107117/17©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: The silicon CMOS technology moves into the sub-20nm regime and due to manufacturing limits the fundamental curb the traditional scaling of transistors. Rapid development in device structures and materials will be need for transistor miniaturization and improvement of performances. Device dimensions are approaching to their scaling limit rise to undesirable effects i.e. drain induced barrier lowering (DIBL), gate leakage current, short channel effects etc. Tri-Material Double Gate (DMDG) structure offers an alternative way of simultaneous SCE suppression and improved device performance by careful control of the gate material work function. We study and analyze the short channel effects (SCE), potential distributions, impact ionization, ion scattering, hot carrier effect and sub threshold swing. Analysis and comparative study of the electrical characteristics of DOUBLE GATE FETs shows that TMDG MOSFET exhibits better performance than DMDG and SMDG MOSFET in terms of surface potential, electric field, carrier mobility, and electron velocity to suppress the scaling effects like DIBL, HCEs etc.
Keywords: Dual Material Double Gate FETs, Scaling, Short Channel Effects (SCE), Potential Distributions, Impact Ionization, Ion Scattering, Sub Threshold Swing.
Scope of the Article: Structural Reliability Analysis