Low Noise Amplifier Design of CMOS Inductorless with Noise Cancellation Technique
Mahesh Mudavath1, K Hari Kishore2, Sanjay Madupu3, Prashanth Chittireddy4, Srinivas Bhukya5

1Mahesh Mudavath, ECE Dept. KLEF, Vaddeswaram, Guntur District, Andhra Pradesh, India. Asst. Professor, Vaagdevi College of Engineering, Bollikunta, Warangal (T.S), India.
2K. Hari Kishore, Professor, ECE Dept. KLEF, Guntur District, Andhra Pradesh, India.
3Sanjay Madupu and Prashanth Chittireddy, Asst, Professor, Vaagdevi Engineering College. Bollikunta, Warangal (T.S), India.
4Srinivas Bhukya, Asst. Prof. Sri Indu College of Engg. & Tech. Ibrahimpatnam, Ranga Reddy Dist.
Manuscript received on September 22, 2019. | Revised Manuscript received on October 20, 2019. | Manuscript published on October 30, 2019. | PP: 1537-1542 | Volume-9 Issue-1, October 2019 | Retrieval Number: A1305109119/2019©BEIESP | DOI: 10.35940/ijeat.A1305.109119
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Abstract: This article presents the Low Noise Amplifier (LNA) design of CMOS Inductorless with noise cancellation (NC) technique for portable wireless receivers. An Inductorless CMOS LNA for multi-standard wireless applications with less-area, single-chip is presented. This NC technique is used to cancel out the noise involvement in LNAs at the output of matching device. The proposed Inductorless CMOS LNA designed in a CMOS 45nm GPDK technology process. The simulated results within the frequency range of 1.04GHz-1.8GHz are considered here. The maximum gain has achieved 20dB @ 1.04GHz, 23dB @ 1.8GHz and a low NF of 1.2dB @ 1.04GHz, 0.6dB @ 1.8GHz. The input and output reflection coefficients are obtained as less than -10dB it is desirable value to fit in this LNA.
Keywords: An Inductorless; Noise Cancellation Technique; Low Noise Amplifier; Noise Figure.