High Efficiency RF Energy Harvesting CNTFET Rectifier for Bio-implants Applications
Munna Khan1, Mohd Tauheed Khan2, Mohd Hasan3

1Munna Khan*, Department of Electrical Engineering, Jamia Millia Islamia, New Delhi, India.
2Mohd Tauheed Khan*, Department of Electrical Engineering, Jamia Millia Islamia, New Delhi, India.
3Mohd. Hasan, Department of Electonics Engineering, Aligarh Muslim University, Aligarh,Uttar Pradesh, India.
Manuscript received on September 23, 2019. | Revised Manuscript received on October 15, 2019. | Manuscript published on October 30, 2019. | PP: 4396-4402 | Volume-9 Issue-1, October 2019 | Retrieval Number: A1184109119/2019©BEIESP | DOI: 10.35940/ijeat.A1184.109119
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Abstract: Carbon nanotube field effect transistor (CNTFET) based full wave rectifier given in the paper, works efficiently in the range of radio frequency. The CNTFET offers extremely less power loss and high through-put because of its high conducting properties. The Complementary Metal Oxide Semiconductor (CMOS) based studies are available but CNTFET based studies are rarely available. Therefore, CNTFET based rectifier has been used for the replacement of CMOS based rectifier architecture. The full wave rectifier circuit was analyzed using 32nm CNTFET Stanford model. An additional circuit of clampers is also used for introducing a negative DC level. Introduced negative DC signal further negated RF input signal and combined signal used for biasing the p type device during its conduction cycle. The CNTFET based rectifier with clamper circuit decreases the effective threshold voltage of switching p CNTFETs. The circuit resulted better RF input sensitivity of the transistor. Results show that 77.7% power conversion efficiency is suitable for powering up the bio-implantable devices.
Keywords: Carbon Nanotube Field Effect Transistor (CNTFET), Complementary Metal Oxide Semiconductor (CMOS); Clamper, Radio Frequency (RF), Full Wave Rectifier.