Modelling and Efficiency Analysis of In Ga P/Ga As Single Junction PV cells with BSF
Mohammad Asif Iqbal1, Arun Dev Dhar Dwivedi2

1Mohammad Asif Iqbal, Research Scholar, SET, Poornima University.
2Dr. Arun Dev Dhar Dwivedi, Professor, SET, Poornima University.
Manuscript received on July 20, 2019. | Revised Manuscript received on August 10, 2019. | Manuscript published on August 30, 2019. | PP: 623-627 | Volume-8 Issue-6, August 2019. | Retrieval Number: F8081088619/2019©BEIESP | DOI: 10.35940/ijeat.F8081.088619
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Abstract: The purposes of PV cells are to transfer light energy into electrical energy. A compelling BSF is a key basic component for a productive PV cell.. In this paper, two significant materials GaAs and In Ga P with top BSF and base BSF cells are researched utilizing the computational numerical modelling TCAD tool based Silva co ATLAS. Past research observed that on the current coordinating condition with top BSF layer and base BSF layer, the cell show a general upgrade of density in Is c (short circuit current ) and Vo  (open circuit voltage ) subsequently improving the overall efficiency of the cell. In this paper, structure of various thin film PV cells based on III-V materials e.g. Ga N, In Ga N have been used to design the multi junction PV cells. Extraction of figures of merits (efficiency, open circuit OC voltage, short circuit SC current and fill factor), simulation of electrical and optical characteristics of these devices have been carried out in this work. Our focus is to improve the optical characteristics, refractive index and absorption coefficient of In Ga P with BSF and tunneling features. In this paper complete Simulation and experimental results are shown and compared. The objective of this paper is to examine the productivity of In Ga P/GaAs PV cells utilizing the Silva co Atlas TCAD simulation software.
Keywords: ATLAS, BSF, PV cells, TCAD, III-V Materials.