Design of Class F Power Amplifier for 433 MHz
I.S. Akila1, A. Sankar Kalidas2, S. Satheesh Kumar3, T. Kavi4, P. Sujithraj5

1Dr. I.S. Akila, Assistant Professor, Department of ECE, Coimbatore Institute of Technology, Coimbatore, (Tamil Nadu), India.
2A. Sankar Kalidas, UG Scholars, Coimbatore Institute of Technology, Coimbatore, (Tamil Nadu), India.
3S. Satheesh Kumar, UG Scholars, Coimbatore Institute of Technology, Coimbatore, (Tamil Nadu), India.
4T. Kavi, UG Scholars, Coimbatore Institute of Technology, Coimbatore, (Tamil Nadu), India.
5P. Sujithraj, UG Scholars, Coimbatore Institute of Technology, Coimbatore, (Tamil Nadu), India.

Manuscript received on 27 July 2022 | Revised Manuscript received on 06 August 2022 | Manuscript Accepted on 15 August 2022 | Manuscript published on 30 August 2022. | PP: 154-163 | Volume-11 Issue-6, August 2022. | Retrieval Number: 100.1/ijeat.F37660811622 | DOI: 10.35940/ijeat.F3766.0811622
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Abstract: The proposed work focuses on the design of a class F power amplifier for 433 MHz which can be used for RFID applications. Power amplifier requires high efficiency and low power dissipation, especially in wireless base stations. In this work, class F amplifier is employed to achieve high efficiency by wave shaping the drain terminal waveforms with suitable harmonic termination networks. At the drain terminal, the voltage and current waveform is shaped into square and half sinusoidal waveforms by employing a harmonics control circuit. The designed class F power amplifier using Advanced Design Software (ADS) simulator has yielded the output power of 44.5 dBm in harmonic balancing for the given input power of 30 dBm at the fundamental frequency with the gain of 14.5 dBm. It was evident from the work that the added harmonic control circuit has suppressed all other harmonics except the third harmonic frequency. 
Keywords: Class F Power Amplifier, GaN HEMT, Harmonic Control Circuit, ADS
Scope of the Article: Class F Power Amplifier