Development of Voltage Fields in Titanium VT1-0 while Forming a Thin Wedge-Shaped Twin
Nikolai V. Kamyshanchenko1, Alexander V. Gal’tsev2, Vladimir A. Belenko3, Tatyana B. Nikulicheva4
1Nikolai V. Kamyshanchenko, Belgorod State University, Russia Belgorod, Pobedy st.
2Alexander V. Gal’tsev, Belgorod State University, Russia, Belgorod, Pobedy st.
3Vladimir A. Belenko, Belgorod State University, Russia, Belgorod, Pobedy st.
4Tatyana B. Nikulicheva, Belgorod State University, Russia, Belgorod, Pobedy st.
Manuscript received on 28 September 2019 | Revised Manuscript received on 10 November 2019 | Manuscript Published on 22 November 2019 | PP: 713-716 | Volume-8 Issue-6S3 September 2019 | Retrieval Number: F11310986S319/19©BEIESP | DOI: 10.35940/ijeat.F1131.0986S319
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Abstract: In the selected treatment modes, a thin wedge-shaped twin was observed, it passed through a section of the crystal with a weak concentration of visible defects. Additional etching of the titanium film revealed an ordered arrangement of dislocations with contrast that appeared on the surface inside the circular sites, which are the stacking faults inside the dislocation loop. The authors provide an explanation of the formation of stacking faults using the detected oscillating contrasts of the faults that are close to the surface. The voltage fields around the wedge-shaped twin, which were constructed with the use of computer simulation, made it possible to determine the value of the elastic stress when it comes into contact with the stopper.
Keywords: Twinning, Titanium, Treatment Mode, Wedge-Shaped Twin, Dislocation Loops, Stacking Fault.
Scope of the Article: Developments in Computer Networks