Low Motional Resistance Lateral Field Extensional UHF MEMS Resonator
Prasanna P. Deshpande1, Rajesh S. Pande2

1Prasanna P. Deshpande, Department of Electronics & Comm. Engg., RCOEM, Gittikhadan, Katol road, Nagpur (M.H), India.
2Rajesh S. Pande, Department of Electronics Enngineering., RCOEM, Gittikhadan, Katol road, Nagpur (M.H), India.

Manuscript received on 18 June 2019 | Revised Manuscript received on 25 June 2019 | Manuscript published on 30 June 2019 | PP: 2194-2198 | Volume-8 Issue-5, June 2019 | Retrieval Number: E7414068519/19©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Abstract: In this paper, we present lateral field extensional mode low motional resistance UHF MEMS resonator. The lowresistance is enabled in fundamental mode of resonator consisting of a piezoelectric transduction zinc oxide film on an underlying Si/SiO2 layer. The motional resistance of this device reduces as number of interdigited electrode increases. This is attributed to the increase in transduction area. The lowest measured motional resistance in this work is 73  at 881 MHz. Our findings offer a multistandard single-chip solution. In a post CMOS process,these resonators could be deployed as filters for WCDMA, GSM, and DVB.
Keywords: Filter, MEMS, Motional Resistance, Resonance Frequency.

Scope of the Article: Frequency Selective Surface