Leakage Current in P-N Junction Diode by Influent from SRFE Process
Narong Sangwaranatee1, Itsara Srithanachai2, Surasuk Niemcharoen3

1Narong Sangnarawatee*, Applied Physics Research Group, Faculty of Science and Technology, Suan Sunandha Rajabhat University, Bangkok, Thailand.
2 Itsara Srithanachai, Department of Electronics, Faculty of K ngineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand.
3Surasak Niemcharoen, Department of Electronics, Faculty of K ngineering,King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand.

Manuscript received on March 29, 2020. | Revised Manuscript received on April 25, 2020. | Manuscript published on April 30, 2020. | PP: 908-910 | Volume-9 Issue-4, April 2020. | Retrieval Number: D7683049420/2020©BEIESP | DOI: 10.35940/ijeat.D7683.049420
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Abstract: This paper present the effect from soft radiation flash exposure (SRFE) on electrical properties of semiconductor device. SRFE process take only few second on semiconductor device but it quite impact to device performance. The part we will study impact from SRFE such as surface and bulk. COMSOL is tool for help to understand more detail in term of surface recombination, temperature and bulk effect. Surface of device get impact from radiation and temperature generate from radiation. Also, silicon bulk get damage from radiation due to has high penetrate. From electrical results show that leakage current of device has reduce after SRFE process, mean radiation can help to improve or recover damage from fabrication process. 
Keywords: SRFE, Leakage current, P-N junction diode, Defect.