Designing and Optimization of Hetrojunction Bipolar Transistor
Arvind Kumar Jaiswal1, Anil Kumar2, Shailendra Kumar Shukla3, Saurabh Sharma4
1Prof. Arvind Kumar Jaiswal, Professor & Head Electronics and Communication Engineering, Institute of Agriculture, Technology and Sciences, Allahabad (U.P.), India.
2Anil Kumar, Department of Electronics Engineering Sam Higginbottom Institute of Agriculture, Technology and Sciences, Allahabad (U.P.), India.
3Shailendra Kumar Shukla, Department of Electronics Communication Engineering Sam Higginbottom Agriculture, Technology and Sciences, Allahabad (U.P.), India.
4Saurabh Sharma, Department of Electronics & Communication, Dev prayag Institute of Technical Studies, Allahabad (U.P), India.
Manuscript received on March 02, 2013. | Revised Manuscript received on April 13, 2013. | Manuscript published on April 30, 2013. | PP: 900-904 | Volume-2, Issue-4, April 2013. | Retrieval Number: D1585042413/2013©BEIESP

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Abstract: This paper deals with the simulation of Si HBT structures using SILVACO TCAD with various parameters. HBT structure has been generated through Dev Edit and device simulation was carried out using Atlas. Base width and Ge profile are very important parameter for HBT. In view of this, the effect of variation of base width and Ge profile on the parameters like Ic, current gain ( andfmaxhas been studied. Our simulation results show that decreasing base width with graded Ge profile in the base region increases both fTand fmax due to decrease in transit time. Effect of boron out diffusion from base is studied next. In this case, the base profile was considered to be Gaussian in nature. Effect on various parameters and parasitic barrier has been studied when the base dopant profile simulation shows that as ∆x is increased f due to parasitic barrier formation on both the junction i.e. base collector and base emitter heterojunction.
Keywords: HBT, SILVACO, Bipolar Transistor.