Design and Performance Analysis of Non-Volatile Adder Using Magnetic Tunnel Junction (MTJ)
Nehru Kandasamy1, Nagarjuna Telagam2, Yogesh Thakur3, Balwinder Raj4
1Nehru Kandasamy, Professor, Department of ECE, Madanapalle Institute of Technology and Science, Hyderabad (A.P.), India.
2Nagarjuna Telagam, Assistant Professor, EECE, GITAM University, Vishakhapatnam (A.P.), India.
3Yogesh Thakur, Department of ECE, NIT, Jalandhar (Punjab), India.
4Balwinder Raj, Department of ECE, NIT, Jalandhar (Punjab), India.
Manuscript received on 18 May 2023 | Revised Manuscript received on 22 June 2023 | Manuscript Accepted on 15 August 2023 | Manuscript published on 30 August 2023 | PP: 30-35 | Volume-12 Issue-6, August 2023 | Retrieval Number: 100.1/ijeat.C435813030224 | DOI: 10.35940/ijeat.C4358.12060823
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: This paper discusses the design of the proposed precharged high DCSL MTJ full adder, the proposed precharged low DCSL MTJ full adder & proposed improved precharge low DCSL MTJ full adder, utilising several methodologies in this study. The designs were simulated using the LTspice XVII software. Results indicate that the proposed precharge DCSL MTJ-based complete adder architecture consumes less power than other full adder architectures. In comparison to other complete adders, it also needs fewer transistors. Therefore, it is adequate to develop a non-volatile serial adder utilising MTJ using the MTJ-based complete adder. Non-volatile serial adder circuits now require a high supply voltage (Vdd) for both writing and sensing operations, which is an energy-intensive process. Scaling down Vdd is a valuable technique for reducing dynamic power consumption in lowpower electronic devices, thereby satisfying the power budget. The average power consumption and Average delay of the Proposed improved precharge low DCSL MTJ full adder are 39.53 pW & 1.90 fs, respectively.
Keywords: DCSL, MTJ, FSM, STT, AP, RAM, Precharged.
Scope of the Article: Electrical and Electronics