DC Characteristics of AlN Spacer Based AlXGa(1-X)N/GaN HEMT for High Power Applications
Murugapandiyan P1, Rajya Lakshmi V2, Ram Kumar N3, Vijay Kumar Raju V4
1Murugapandiyan P, Sr. Assistant Professor, Department of ECE, Anil Neerukonda Institute of Technology and Sciences, Vishakhapatnam (A.P), India.
2Rajya Lakshmi V, Professor, Department of ECE, Anil Neerukonda Institute of Technology and Sciences, Vishakhapatnam (A.P), India.
3Ram Kumar N, Assistant Professor, Department of ECE, Anil Neerukonda Institute of Technology and Sciences, Vishakhapatnam (A.P), India.
4Vijay Kumar Raju V, Assistant Professor, Department of ECE, Anil Neerukonda Institute of Technology and Sciences, Vishakhapatnam (A.P), India.
Manuscript received on 22 April 2019 | Revised Manuscript received on 01 May 2019 | Manuscript Published on 05 May 2019 | PP: 255-257 | Volume-8 Issue-2S2, May 2019 | Retrieval Number: B10530182S219/19©BEIESP
Open Access | Editorial and Publishing Policies | Cite | Mendeley | Indexing and Abstracting
© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: We report the DC characteristics of 0.3µm gate length, 4X75 µm width , AlN spacer layer based AlXGa (1- X)N/GaN HEMT devices for two different Al mole fraction x=0.30 and x=0.27 in the barrier layer. The proposed device exhibits a maximum drain current IDS of 1210 mA/mm, highest sheet carrier density (ns) of 1.39×1013 cm-2 , mobility (µ) of 1643 cm2 / V-s and transconductance (gm) of 288 mS/mm for x=0.30 . The proposed HEMT structure is simulated using Synopsys TCAD tool and results are verified with experimental data. This excellent DC characteristics obtained from this HEMT device have helped us propose that III-N compound semiconductors with higher 2DEG sheet carrier density are ideal for future high power applications.
Keywords: 2DEG, Sheet Charge Density, HEMT, Transconductance, Polarization, DC Characteristics.
Scope of the Article: Internet and Web Applications