Fabrication and Characterization of Pulsed Laser Deposited Lead Free Thin Film Capacitors
Deepshikha Kushwaha1, Ravikant2, Kirandeep Singh3, Monika Aggarwal4
1Deepshikha Kushwaha, ECE, B.G.I.E.T, Sangrur, India.
2Ravikant, ECE, B.G.I.E.T, Sangrur, India.
3Kirandeep Singh, Physics Department, I.I.T. Roorkee, Roorkee, India.
4Monika Aggarwal, ECE, B.G.I.E.T, Sangrur, India.
Manuscript received on November 22, 2012. | Revised Manuscript received on December 04, 2012. | Manuscript published on December 30, 2012. | PP: 141-144 | Volume-2, Issue-2, December 2012.  | Retrieval Number: B0875112212 /2012©BEIESP

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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Abstract: The current study explores the dielectric and ferroelectric properties of pulsed laser deposited (Ba1-x ,Srx )TiO3 , Ba(Zrx,Ti1-x )O3 and [(Ba1-x,Srx ), (Zry,Ti1-y )] O3 thin films deposited on LaNiO3 bottom electrode. The crystallographic study of these films done using XRD reveals that these films were crystalline in nature having (110) preferred orientation. An improved crystallite structure with intense (110) reflection was observed for BSZT/LNO/Si thin film. The atomic force micrographs indicate that BST, BZT and BSZT thin films have different grain distributions and grain sizes and is in consistence with XRD results. The high value of remnant polarization (Pr) and low value of coercive field (Ec ) of BSZT thin film shows that it can be used in memory devices. In addition, excellent dielectric properties with high dielectric constant were observed for the BSZT capacitor. A highest tunability of 68% was measured at a frequency of 1 MHz could be achieved for BZST thin film, showing that BSZT would be suitable candidate for tunable devices.
Keywords: Dielectric properties, Pulsed laser deposition, Tunability X-ray diffraction.