Effect of Annealing on the Crystal Structure of COSI2/SI(100) Formed By MBE, SSE and RE Epitaxy Techniques
Baxrom Egamberdiyevich1 ,Xamidjonov Islomjon Xolmatovich2, Mavlyanov Abdulaziz Shavkatovich3, Sayfulloyev Shohruh Amin o’g’lih4
1Egamberdiyev Baxrom Egamberdiyevich, professor, DSc ,Tashkent State Technical University, Tashkent, Uzbekistan
2Xamidjonov Islomjon Xolmatovich, PhD,National University of Uzbekistan, Tashkent, Uzbekistan.
3Mavlyanov Abdulaziz Shavkatovich, Ph,D Tashkent State Technical University,Tashkent, Uzbekistan
4Sayfulloyev Shohruh Amin o’g’li, PhD student,Scientific Research Institute of Physics of Semiconductors and Microelectronics National, University of Uzbekistan, Tashkent, Uzbekistan
Manuscript received on September 23, 2019. | Revised Manuscript received on October 15, 2019. | Manuscript published on October 30, 2019. | PP: 4813-4818 | Volume-9 Issue-1, October 2019 | Retrieval Number: A2929109119/2019©BEIESP | DOI: 10.35940/ijeat.A2929.109119
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Abstract: The paper reports a number of new original experimental results related to the study of the effect of annealing on the crystal structure of the surface of silicon doped with cobalt ions. The results of studies of the CoSi2 /Si(100) epitaxial structures formed by molecular beam epitaxy (MBE), solid state epitaxy (SSE), and other techniques are presented. Relations between morphology, stoichiometry, and growth conditions of CoSi2 / Si structures were established. The ratio of the intensities of the Auger signals of cobalt and silicon in the CoSi2 film, as well as silicon in CoSi2 and the silicon substrate was determined by the Auger profile of the sample. The authors determined that under certain conditions of heat treatment of the radiation on the surface of a single crystal, the so-called epitaxial silicides are formed which can play the role of conductive layers or metal coated. The structural state diagrams of CoSi2 / Si (100) thin-film systems formed by the MBE, SSE and other methods were compiled.
Keywords: Impurities, Profiles, Influences, Thermal Annealing, Depth, Concentration Distribution, Radiation Dose, Activation Temperatures, on Implantation, Structure, Silicide, Film.