Structural, Optical and Electrical Analysis of Pentacene Thin Film
S. Sindhu1, K. Shree Krishna Kumar2
1S. Sindhu, School of Technology and Applied Science, Mahatma Gandhi University, Kottayam (Kerala), India.
2Dr. K. Shree Krishna Kumar, School of Technology and Applied Science, Mahatma Gandhi University, Kottayam (Kerala), India.
Manuscript received on 15 December 2019 | Revised Manuscript received on 22 December 2019 | Manuscript Published on 31 December 2019 | PP: 38-42 | Volume-9 Issue-1S6 December 2019 | Retrieval Number: A10081291S619/19©BEIESP | DOI: 10.35940/ijeat.A1008.1291S619
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Abstract: The significant electrical characteristics of pentacene thin film was studied by fabricating silver-pentacene-aluminium sand witch device. This metal-semiconductor-metal (MSM) device can act as the diode . When investigating, it is found that the diode can act as an equivalent plate capacitor as reverse bias mode exclusive of current flow. In forward bias mode, studied diode as an equivalent circuit with a parallel circuit of resistance –capacitance. This paper describes analysis of capacitance by measuring I-V characteristics and impedance measurement. The free samples of pentacene are also analysed using field emission scanning electron microscope (FESEM) and X-ray diffraction micrographs (XRD) . The X-ray diffraction micrograph shows the configuration of pentacene in the (-1 0 2) plane as the strongest orientation .The particle size are analysed using FESEM. The optical characteristics are analysed using UV spectrometer. The spectra of absorption, reflection and refraction are studied well.
Keywords: XRD, FESEM, UV, Pentacene, Optical Spectra, Capacitance.
Scope of the Article: Structural Engineering