Simulation and Performance Evaluation of In GaP/InGaAs/GaAs Dual Channel HEMT
Limali Sahoo1, Subhaluxmi Sahoo2, Satyaprakash Narayan Das3

1Limali Sahoo, ECE Dept., SOA (Deemed to be) University, Odisha, India.
2Subhaluxmi Sahoo*, ECE Dept., SOA (Deemed to be) University, Odisha, India.
3Satyaprakash Narayan Das, ECE Dept., SOA (Deemed to be) University, Odisha, India.
Manuscript received on September 23, 2019. | Revised Manuscript received on October 15, 2019. | Manuscript published on October 30, 2019. | PP: 4673-4676 | Volume-9 Issue-1, October 2019 | Retrieval Number: A1780109119/2019©BEIESP | DOI: 10.35940/ijeat.A1780.109119
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Abstract: An In Ga P/In Ga As/GaAs dual channel High Electron Mobility transistor (HEMT) with three δ doped layers with different doping densities is modeled and simulated in this paper by using two dimensional ATLAS simulation package from Silvaco software. Different DC performances (Drain characteristic and Transfer characteristics) at various voltage levels are analyzed and results are compared by taking the gate length of 500nm and 800nm at two different temperature levels (250k and 300k) to determine the efficiency of the device for high speed digital device applications. The paper describes the effect of parasitic access resistance on device gate length and effect of mobility by varying temperature. High drain current drivability, large carrier densities and better saturation characteristics are realized because of the inclusion of InGaAs channel instead of GaAs DC structure and schottky behavior of InGaP layer. The studied double channel HEMT with proper dimensions and accurate doping profile makes it a promising device for high performance electronics device applications.
Keywords: Atlas, delta doped sheets, In GaP, schottky.